Copper Ion Irradiated SnO2 Quantum Dots for Higher Electroluminescence in Nano Light Emitting Device

Abstract

SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> quantum dots have been synthesized using simple low cost chemical quenching method and they are exposed to 100MeV swift heavy ions of copper, with doses of 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> and 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> ions/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The samples are characterized using standard characterization instruments such as UV/VIS spectroscopy, X-ray diffraction study (XRD), Raman spectroscopy, and high resolution transmission electron microscopy (HRTEM). The irradiated as well as the pristine quantum dots of SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> are introduced into ZnO on TCO substrate to fabricate different nano light emitting device (LED). The electroluminescence (EL) variation with change in supply voltage is studied at room temperature. An enhancement in EL intensity has been obtained with increase in ion irradiation doses in quantum dot LEDs, when compared to pristine one. Also, the almost instantaneous response time and linear variation of emission intensity with voltage makes these low doses of swift heavy ion irradiated SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> quantum dots a more suitable material for EL-based devices.