Abstract
Chalcopyrite copper-indium-gallium-diselenide (CIGS) nanoparticles are useful for photovoltaic applications. In this study, the synthesis of CIGS powder was examined, and the powder was successfully synthesized using a relatively simple and convenient elemental solvothermal route. From the reactions of elemental Cu, In, Se and Ga(NO3)3 powders in an autoclave with ethylenediamine as a solvent, spherical CIGS nanoparticles, with diameters ranging from 20-40 nm, were obtained using a temperature of 200°C for 36h. The structure, morphology, chemical composition and optical properties of the as-synthesized CIGS were characterized using X-ray diffraction, transmission electron microscopy, selected area electron diffraction, scanning electron microscopy, inductively coupled plasma-mass spectrometry. In this sample, the mole ratio of Cu:In:Ga:Se was equal to 0.89:0.71:0.29:2.01, and the optical band gap was found to be 1.18 eV. The solar cell obtained a power conversion efficiency of 5.62% under standard air mass 1.5 global illumination.
Highlights
The simplest scenario to stabilize CO2 emissions by the middle of this century is one in which photovoltaics and other renewables are used for electricity, hydrogen is used for transportation, and fossil fuels are used for residential and industrial heating [1]
Chalcopyrite semiconductors have recently attracted intense interest due to their appropriate band gaps and high absorption coefficients, which are ideal for solar cell applications
As a strong polar solvent, EN plays an important role in the formation of CIGS nanoparticles in the synthesis process
Summary
The simplest scenario to stabilize CO2 emissions by the middle of this century is one in which photovoltaics and other renewables are used for electricity, hydrogen is used for transportation, and fossil fuels are used for residential and industrial heating [1]. Chalcopyrite semiconductors have recently attracted intense interest due to their appropriate band gaps and high absorption coefficients, which are ideal for solar cell applications. Recent studies have demonstrated efficiencies as high as 20.3% in thin-film copper-indium-gallium-diselenide (CIGS)-based solar cells [2]. Co-evaporation or sputter deposition is normally employed to fabricate the absorption layer of thin-film CIGS-based solar cells. A conventional vacuum-based process is required to obtain these CIGS films. This type of processing is complex, expensive and difficult to scale-up [3]. Recently tried to fabricate various types of absorbers for thin-film photovoltaics using relatively simple procedures, which will make semiconductor preparation more cost-effective. As an important technique for wet chemistry, the solvothermal method has been employed for the preparation of different kinds of materials [10], due to the low temperature required, the simplicity and good yield
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