Abstract
The interactions of organic acids with copper were characterized with electrochemical and atomic force microscopy methods in order to develop efficient cleaning formula for wet copper processing. The etch rate and oxidation mechanisms of copper were studied in mono-, di-, and triorganic acids. A similar electrochemical behavior of copper was observed in all cases, except in the case of oxalic acid, which shows passivating properties. The interactions of organic acids with diluted hydrofluoric acid result in significant reduction in copper dissolution rate.
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