Abstract
The influence of doping level of basic material on electrical resistance controlled by gas chemisorption is investigated experimentally for chemically deposited tin oxide thin films with different amounts of Cu and Sb additives. Significant modification of dependences of resistance versus temperature in oxygen-rich atmosphere and anomalous change of selectivity of resistance response to CO and H 2 gas are obtained by different doping levels of the films. The main features of the experimental results are explained by the variation of the position of the Fermi level with the concentration of bulk impurities.
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