Abstract
Copper diffusion in thin In2S3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In2S3 layers (thickness 100nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In2S3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9×10−11cm2/s and 0.3eV, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
