Copper diffusion hindrance in Ti-TM (TM = W, Ru) alloys: A first-principles insight

Abstract

This study utilizes DFT calculations to assess the effectiveness of Ti-TM (TM = W, Ru) alloys in obstructing copper diffusion, a pivotal factor for semiconductor device reliability. The calculated diffusion barriers for Cu in TiRu and Ti4W12 alloys are found to be 0.48 eV and 0.34 eV, respectively, significantly surpassing the 0.25 eV barrier for Cu diffusion in Si. This comparative analysis highlights the enhanced diffusion resistance of these alloys, with TiRu displaying a barrier nearly twice that of Si. An in-depth examination of the electronic structure and microstructural attributes of the alloys indicates that atomic interactions at the Cu/Ti-TM interface play a crucial role in hindering Cu diffusion. The local density of states, charge density differences, and electron localization functions were scrutinized to clarify the nature of these interactions. The research uncovers that the combined action of Ru, W, Cu, and Ti atoms leads to a synergistic strengthening of the diffusion barrier, implying a robust interatomic repulsion that restricts Cu migration. The findings contribute to a deeper fundamental understanding of Cu diffusion mechanisms in Ti-TM alloys and offer a scientific basis for the judicious selection of materials for diffusion barrier layers. The study supports the further exploration and potential application of TiRu and Ti4W12 alloys in the semiconductor industry.