Abstract
Stoichiometric and partially reduced ceria films were deposited on preoxidized Ru(0001) crystal by Ce evaporation in oxygen atmosphere of different pressures at 700 K. Copper-ceria interaction was investigated by deposition of metalic copper on both types of substrate. The samples were characterized by low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) of core states and resonant photoelectron spectroscopy (RPES) of the valence bands. Copper adsorption on stoichiometric ceria caused reduction of CeO2, while on the oxygen-defficient ceria it partially reoxidized the substrate. This is in agreement with DFT+U calculations of copper adsorption on stoichiometric and defective ceria surfaces.
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