Abstract
In this work we present research results on a new paste NPCuXX (where: NP—new paste, CuXX—component, XX—a modifier consisting of Ni and other important elements) based on a copper composite (CuXX) for fabrication of front electrodes in silicon solar cells. The CuXX composite is obtained by chemical processing of copper powder particles and can be used in two ways: as an additive to commercially available paste or as a base material for a new paste, NPCuXX. The CuXX offers the possibility to exchange up to 30 and 50 wt.% Ag into Cu, which significantly decreases the solar cells material costs, and therefore, the overall solar cell price. Emphasis was placed on a proper mass suitable fabrication process of the CuXX component. The NPCuXX paste has been applied both to conventional cell structures such as aluminum-back surface field (Al-BSF) and passivated emitter and rear contact (PERC), and finally solar cells with front electrodes deposited by screen-printing method were fabricated and characterized by current-voltage techniques. This paper reports the first implementation of the copper volumetric material into a screen print paste used in a high-temperature metallization process to fabricate the front contacts of Si solar cells with a highest fill factor of 77.92 and 77.69% for the abovementioned structures, respectively.
Highlights
The global market requirement for crystalline silicon (c-Si) solar cell production forces a cost reduction per unit power which increases the effectiveness of solar systems [1]
Comparison of electrical parameters of selected cells with the highest fill factor (FF) and Eff value with a front electrode applied from a modified paste A in the aluminum-back surface field (Al-BSF) and passivated emitter and rear contact (PERC) structure with the parameters of cells made from the commercial paste (Table 4) indicates that at selected metallization temperatures in the range of 930–940 ◦ C, paste A allows to create a cell with parameters at a similar level as the reference paste
JO1 and JO2 of cells with A and B paste contacts with respect to the reference Ag paste. These results show that the CuXX component properly blocks the diffusion of Cu atoms into the p–n junction region of the solar cell
Summary
The global market requirement for crystalline silicon (c-Si) solar cell production forces a cost reduction per unit power which increases the effectiveness of solar systems [1]. The price of silver ranged from development and silicon heterojunction (SHJ) technology shows a slowly increasing share [5]. It is inability to estimate production costs can effectively inhibit investment in increasing production predicted that further efforts are being made to reduce the coverage of the front side of the solar cell potential [9]. The work being done is a research work, and the results presented in it have not been achieved by any other scientific and research unit in the world
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