Copper‐Based MOF Crystals for Low‐k Dielectric Applications

Abstract

AbstractMetal‐organic frameworks (MOFs) are precious resources for future demands in every realm of life. Currently, researchers are striving to create MOF materials with low dielectric constants for the microelectronic sector. In this work, a MOF compound, copper dimandelate (CuDM), is crystallized using the regulated diffusion of cations through viscous reactant media and its suitability for dielectric applications is studied for the first time. The crystallinity of the compound is confirmed and structural characterization is carried out using powder X‐ray diffraction measurements. The various functional groups present in the grown sample are confirmed by Fourier transform infrared and Raman analyses. Thermogravimetric analysis establishes the thermal stability of the material up to a temperature of 220 °C. The predicted chemical formula, (Cu[(C6H5) HOCH COO)]2) is verified by CHNS elemental analysis. The observed dielectric constant varies from 18.55 to 8.15 with applied frequency ranging from 0.01 Hz to 10 MHz, making it suitable for low‐k dielectric applications. The optical band gap and Urbach energy are obtained as 3.65 and 0.6211 eV, respectively, by UV–vis analysis. Solid‐state dielectric parameters, which include valence electron plasma energy, Penn gap, Fermi energy, electrical polarizability, and susceptibility of the material, are calculated using theoretical formulations.