Abstract
We have determined the coordination of arsenic impurities in amorphous silicon-hydrogen alloys prepared by plasma decomposition of silane-arsine mixtures. From analysis of the extended x-ray absorption fine structure (EXAFS) on the arsenic $K$-shell absorption, we find at low arsenic concentrations that an average of two arsenic atoms in ten are fourfold coordinated with silicon. This is the first direct evidence for the occurrence of substitutional doping in an amorphous semiconductor.
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