Abstract
In 0.25 Ga 0.75 As epilayers were grown on GaAs (001) substrates (1.8% misfit strain) by molecular beam epitaxy to investigate the two-dimensional to three-dimensional transition as a function of thickness (t⩽30 MLs). Tapping-mode atomic force micrographs show the evolution of the morphology as a function of thickness. As the film is deposited, the nucleation of 3D islands followed by cooperative nucleation of pits is observed. As the thickness increases, both islands and pits continue to nucleate and grow until they coalesce, resulting in a fully formed ripple morphology running along the [11̄0]. The ripples also exhibit a secondary alignment roughly along the 〈310〉 which is attributed to the nucleation of islands with {136} faces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
