Abstract
The authors present a Monte Carlo study of the Coulomb interaction in polar semiconductors involving both single-particle (screened carrier-carrier interaction) and collective excitations (plasmon scattering). Relaxation of high energy carriers, created by laser excitation, occurs through the interaction with the lattice (mainly via optical phonon emission) and with other carriers. The lattice (mainly via optical phonon emission) and with other carriers. The importance of the latter mechanism has been demonstrated recently by time-resolved and CW hot (e, AA) luminescence experiments which allow the authors to distinguish the separate contributions due to phonon and intercarrier scattering. They study the energy exchange mechanisms in a multi-component plasma using an ensemble Monte Carlo simulation where the intercarrier scattering is treated with two different approaches, the first based on a k-space model that allows the separation of short range (single-particle collisions) and long range (plasmon scattering) Coulomb potential, the second adopting a molecular dynamics scheme. The results of the simulation and the comparison between the two models are discussed for both GaAs and InP. A very good agreement with the experimental results is found.
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