Abstract
The authors have expressed the nonlinear optical absorption of a semiconductor in terms of its linear spectrum. They determined that the two-photon absorption coefficient in a strong dc electric field of a direct gap semiconductor can be expressed as the product of a differential operator times the convolution integral of the linear absorption without a dc electric field and an Airy function. They have applied this formalism to calculate the two-photon absorption coefficient and nonlinear refraction for GaAs and ZnSe using their linear absorption and have found excellent agreement with available experimental data.
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