Abstract
Spin Hall angle and spin diffusion length in amorphous bismuth (Bi) are investigated by using conversion of a pure spin current to a charge current in a spin pumping technique. In Bi/Ni80Fe20/Si(100) sample, a clear direct current (DC) electromotive force due to the inverse spin Hall effect of the Bi layer is observed at room temperature under a ferromagnetic resonance condition of the Ni80Fe20 layer. From the Bi thickness dependence of the DC electromotive force, the spin Hall angle and the spin diffusion length of the amorphous Bi film are estimated to be 0.02 and 8 nm, respectively.
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