Abstract
The model, which confirms that the interaction of trapped positive charges (hydrogenous species) in the oxide and electrons from the substrate is an important component of radiation-induced interface-trap buildup, is presented. The “one-to-Koi” relationship between the number of trapped holes annealed and number of interface-trap generated is used for prediction of MOS device response in space environment. The model of enhanced low dose rate effect (ELDRS) is proposed. ELDRS conversion model is based on the assumption that there are two types of traps: shallow and deep. The time constants of these traps are different and correspond to interface-trap buildup at high dose rates for shallow traps and at low dose rates for deep traps. The possible physical mechanism of ELDRS effect elimination in the silicon-germanium (SiGe) bipolar transistors is described. The original mechanism of interface-trap buildup saturation based on radiation-induced charge neutralization (RICN) effect is presented.
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