Abstract
The power conversion efficiencies of single-junction III–V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for wireless power transmission were investigated by varying the wavelength and incident power of a laser diode. The GaAs solar cell exhibited the highest conversion efficiency of 52.7% at a laser wavelength of 824 nm and a laser beam irradiance of 4 suns. For each solar cell, the conversion efficiency peaked at an optimal incident laser wavelength and this effect was examined in detail. It was found that the conversion efficiency is maximal when the laser photon energy is 80–100 meV higher than the bandgap of the semiconductor material.
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