Abstract
The conversion of threading screw dislocations (TSDs) to defects on the basal plane during SiC solution growth caused by macrostep advance is a key factor to improve crystal quality. We realized the TSD conversion in 4H-SiC C face solution growth by modification of the surface morphology including macrosteps by addition of 5 atom % Ti into pure Si solvent. Synchrotron X-ray topography revealed that the possibility of TSD conversion increased to about 10% with the addition of 5 atom % Ti. In addition, the TSD conversion ratio depends on the shape of the macrostep edge. The gentle slope hardly made TSD conversion. The elastic energy of dislocations in anisotropy crystals was postulated as an explanation for the influence of step shape on TSD conversion behavior.
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