Abstract
Unintentionally doped GaAs crystals grown by the horizontal Bridgman method were annealed at temperatures in the range from 700 to 910 °C under As overpressure. The n-type crystals subjected to heat treatment under As overpressure lower than the growing pressure revealed a conductivity-type conversion to p type. The electrical conductivity, Hall coefficient, and photoionization cross sections were measured on the p-type samples, and the resulting analysis indicates that the conversion center is a double acceptor, most probably associated with CuGa defect. The activation energies attributable to the singly and doubly ionized states of the acceptor were found to be ∼150 and ∼380 meV at 0 K, respectively. The doubly ionized acceptor states turned out to provide strong space-charge scattering, which plays a crucial role in determining the hole behavior in the present material at high temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
