Abstract
A detailed study of the structural modifications present in GaS and GaSe crystals has been performed by means of the convergent-beam electron diffraction technique. Several single crystals have been analysed, as grown both from the melt, by the Bridgmann-Stockbarger method, and from the vapour, by the iodine-assisted chemical transport method. The results of the electron microscopy observation show the structure of GaSe to be strongly dependent on the growth method. In the melt-grown crystals only the hexagonal β structure (space group P63/mmc) has been observed for both GaS and GaSe. It has been confirmed by the related symmetry centre, evidenced in particular low symmetry orientation of the samples. The vapour-grown crystals show the same β structure for GaS and the superposition of the hexagonal e polytype (space group $$P\bar 62m$$ ) and the rhombohedral γ polytype (space group R3m) for GaSe samples. An accurate evaluation of the lattice parameters has been performed for all the analysed crystals.
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