Abstract
In order to carry out a convenient preparation of Pb ( Zr x Ti 1-x) O 3 thin films by combinatorial chemical solution deposition process, two kinds of Pb ( Zr x Ti 1-x) O 3 precursor solutions ( PbTiO3 precursor solution and PbZrO3 precursor solution) were prepared by a simple process. There is no distillation and no inert gas shielding in the process, and the precursors are more stable than the conventional precursor solution. A series of Pb ( Zr x Ti 1-x) O 3 samples (x = 0.1–0.9, in step of 0.1 amount change) were prepared using the two precursor solutions. The process was fast and saved time. There were strong exothermic reactions for the samples with the Zr content x in a short range from x = 0.23 to 0.27 at 161–200°C. The Pb ( Zr x Ti 1-x) O 3 thin films showed perovskite structure with strong (111)-preferred orientation. The structure and ferroelectric property of the PZT thin films are comparable with those of the PZT fabricated by conventional process.
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