Abstract
A computational model is developed to investigate the effect of natural convection on the dissolution and growth processes of liquid phase epitaxy of ternary semiconductor alloys. This model, for the first time, accounts for diffusive and convective mass transport in the liquid phase, mass diffusion in the solid phase, and phase equilibrium and mass conservation at the moving liquid-solid interfaces. Numerical simulations are carried out for a horizontal sandwich LPE system used for growth of Ga x In 1 − x As by a temperature modulation technique. The simulation results show that solutal convection plays an important role in LPE growth. It enhances growth rate of the upper substrate during the cooling of the solution and gives rise to faster dissolution rate of the lower substrate during the heating of the solution. Natural convection was also found influencing compositional uniformity of the grown crystals.
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