Abstract
The submerged heater method was used to grow doped InSb and Ge crystals. The axial distribution of the dopants was found to be similar to space grown crystals. The ideal, diffusion-controlled steady-state segregation of Te-doped InSb was achieved for the first time in the terrestrial environment. One Sb-doped Ge single crystal was grown under steady-state conditions using a zone-leveling procedure.
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