Abstract
Gas flow and energy and species transport in laser‐induced chemical vapor deposition (LICVD) of amorphous silicon films by silane pyrolysis are analyzed by finite element analysis of a two‐dimensional model for the process. Spatial nonuniformity of the deposited film is shown to result from diffusion controlled transport of products between the beam and substrate. Deposition profiles are affected by buoyancy‐driven convection only at increased gas pressures. Horizontal orientation of the reactor with respect to gravity is optimal because the stagnation‐like flow, that results adjacent to the substrate, enhances mixing, and smoothes the film profile.
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