Controlling the self-organization of InAs quantum dots upon growth by means of vapor-phase epitaxy on an antimony δ-doped GaAs buffer layer

Abstract

This work examines the possibility of controlling the parameters of InAs/GaAs quantum dot arrays obtained by metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure with using antimony as a surfactant. The possibility of controlling the parameters and optical properties of InAs quantum dot arrays by varying the surface concentration of Sb atoms in a GaAs buffer layer surface is demonstrated. A model of quantum dot array formation in the presence of Sb atoms is proposed.