Controlling the quantum dot nucleation site

Abstract

Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of semiconductors. In order to exploit the unique electronic properties of semiconductor QDs in novel quantum effect devices, the lateral dimensions of these structures have to be reduced to the order of tens of nanometers, which is the range of the De Broglie wavelength of electrons inside these materials. Moreover, millions of QDs must be arranged in dense ordered arrays to achieve the necessary active volume for optoelectronic applications. Nowadays it is possible to control size and shape of the nanocrystals, but it is still difficult to decide their nucleation site. Many approaches have been undertaken to overcome this problem, like using regular dislocation networks, lithographically and Atomic Force Microscopy (AFM) patterned substrates, naturally patterned surfaces. We present results obtained by some of these methods, visualized by Scanning Tunnelling Microscopy (STM) or AFM microscopy. STM measurements at high temperature during the epitaxial growth are of great help in these studies. Images and movies of the growth of Ge on Si help to identify the real nucleation sites of the islands and to follow their evolution. The influence of the ‘step bunching’ on the self-organization of Ge islands on Si(111) surfaces will be analysed, as an example of growth on self-nanostructured surfaces.