Abstract
Synchrotron radiation core-level photoemission spectroscopy, scanning tunneling microscopy (STM), and first-principles calculations have been utilized to explore the growth processes and the atomic structure of the resulting films during the two-step molecular beam epitaxy (MBE) of In and Bi on the Si(111) surface. Deposition of 1.0-ML Bi on the In/Si(111)-(4 × 1) surface at room temperature results in Bi-terminated BiIn-(4 × 3) structures, which are stable up to ~300 °C annealing. By contrast, deposition of In on the β-Bi/Si(111)-(√3 × √3) surface at room temperature results in three dimensional (3D) In islands. In both cases, annealing at 460 °C results in the same In-terminated In0.75Bi/Si(111)-(2 × 2) surface. Our DFT calculations confirm that the surface energy of In-terminated In0.75Bi/Si(111)-(2 × 2) system is lower than that of Bi-terminated Bi0.75In/Si(111)-(2 × 2). These findings provide means for the control of the polarity of the MBE In-Bi atomically thick films.
Highlights
The lack of inversion symmetry in the directions of III-V compounds gives rise to a difference in various of physical, chemical, and metallurgical properties of the A and B surfaces[12]
The photoelectrons were collected by a 125-mm hemispherical analyzer at take-off angle of ~10° with an acceptance angle of ±8° in a μ-metal shielded UHV chamber, and the overall energy resolution was better than 120 meV with the photon energy of 70 and 130 eV
It is preferable to be able to control the polarity of the first overlayer
Summary
Cho-Ying Lin[1], Chia-Hsiu Hsu[2], Yu-Zhang Huang[1], Shih-Ching Hsieh[1], Han-De Chen[1], Li Huang[2], Zhi-Quan Huang[3], Feng-Chuan Chuang 3 & Deng-Sung Lin 1. Deposition of 1.0-ML Bi on the In/Si(111)-(4 × 1) surface at room temperature results in Bi-terminated BiIn-(4 × 3) structures, which are stable up to ~300 °C annealing. Deposition of In on the β-Bi/Si(111)-(√3 × √3) surface at room temperature results in three dimensional (3D) In islands In both cases, annealing at 460 °C results in the same In-terminated In0.75Bi/Si(111)-(2 × 2) surface. Our DFT calculations confirm that the surface energy of In-terminated In0.75Bi/Si(111)-(2 × 2) system is lower than that of Bi-terminated Bi0.75In/Si(111)-(2 × 2) These findings provide means for the control of the polarity of the MBE In-Bi atomically thick films. It is important to distinguish the polarity of the III-V compound film To address this issue, we employ core-level photoemission spectra, STM, DFT to study the MBE grown InBi-Si(111) system. It is found that the A surface is energetically more favorable, but the B surface can be obtained in the two-step growth method
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