Controlling the Micro- and Macrohomogeneity of the Properties of Doped Semiconductor Crystals

Abstract

Results are presented from theoretical calculations and experimental investigations on controlling the homogeneity of the structure and properties of semiconductor crystals grown via vertical directional crystallization. The effect radial and axial temperature gradients, crystallization rates, and diffusion mass transfer have on the micro- and macrohomogeneity of the grown crystals is studied using the example of germanium heavily doped with gallium.