Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Utkir Bahodirovich Sharopov,Kulwinder Kaur,Muzaffar Kadambaevich Kurbanov,Erkin Turobovich Juraev,Dilmurod Shamurodovich Saidov,Mirkomil Mirvalievich Sharipov

doi:10.1007/s12633-021-01268-0

Utkir Bahodirovich Sharopov, Kulwinder Kaur + Show 4 more

Open Access

https://doi.org/10.1007/s12633-021-01268-0

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Abstract

A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10− 9 Pa, the silicon surface begins to oxidize again within 10 min.

Highlights

One of the most popular materials in modern micro- and nanoelectronics is monocrystalline silicon and silicon dioxide [1, 2]
A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface
Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum

Summary

Introduction

One of the most popular materials in modern micro- and nanoelectronics is monocrystalline silicon and silicon dioxide [1, 2]. In the production of silicon integrated circuits, in addition to the quality of the surface structure, the choice of the crystallographic orientation of the substrate crystals is of great importance [9,10,11]; for example, the (111) planes are oxidized faster than the (100) planes due to the high surface packing density of atoms capable of entering the oxidation reaction [12]. The degree of purification has a direct impact on the quality of products; an increasing number of microelectronic companies are moving in this direction [13,14,15,16]. Orientation effects during the etching of a surface of crystals are considered to be important for obtaining white light from GaN-based silicon LEDs [20,21,22]

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