Abstract
We investigate electron tunneling through GaAs/(AlGa)As/GaAs, single-barrier tunnel diodes in which a layer of self-assembled InAs quantum dots is incorporated onto the center plane of the (AlGa)As tunnel barrier. We study the effect on the electrical conduction of substrate orientation and of the inclusion of thin GaAs cladding layers on either side of the dot layer. We find that the presence of the cladding layers increases the conduction. We attribute this to a raising of the energy of the electron states, probably due to the diffusion of Ga into the dots. Photoluminescence measurements confirm this hypothesis. We show that this effect can be used to tailor the transport characteristics for specific applications.
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