Abstract
Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>1020 cm−3) that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry. This experimental study investigates an approach that allows shallow and heavy doping in silicon micropillars. It aims to demonstrate that silicon dioxide (SiO2) can be used to control the dopant penetration depth in silicon micropillars.
Highlights
Micropillar arrays have been of interest for photovoltaic applications because structured patterning of a planar silicon surface leads to enhanced light trapping efficiency [1,2,3,4,5,6,7]
The main challenge in forming radial p–n junctions is achieving shallow doping that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry [14,15]
This paper aims to demonstrate that silicon dioxide (SiO2 ) can be used as a layer to achieve shallow
Summary
Micropillar arrays have been of interest for photovoltaic applications because structured patterning of a planar silicon surface leads to enhanced light trapping efficiency [1,2,3,4,5,6,7] This enhancement leads to an increase in efficiency between 1.5–11% [8] and in turn enables solar cells based on thin layers (
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