Abstract
Phase transition of HfO2 thin film has been investigated to demonstrate desirable electrical properties, such as high dielectric constant or ferroelectricity, however, the most of results exhibited a limitation on enhancing the crystallinity because of employing dopant. In this study, the crystallization behavior in the thin film was investigated in the intrinsic and extrinsic aspects. In the laminated structure, highly crystallized tetragonal phased HfO2 was obtained by controlling the layer thickness and adapting the template effect for intrinsic and extrinsic crystallization, respectively, without using dopant. Moreover, by the phase composition analysis, the dielectric constant of various crystal structures of HfO2 thin film, tetragonal, monoclinic, and amorphous phases, were revealed using the data obtained from the real deposited thin film by atomic layer deposition process, not from the theoretical calculation.
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