Abstract
High-quality n-type solid-phase crystallized (SPC) polycrystalline silicon thin films are successfully made on planar glass by controlling the stress and intragrain misorientation in the films. If not controlled, the stress in the films is found to exceed 650 MPa, with a high intragrain misorientation of up to 5°. The stress is successfully engineered to values below 130 MPa through the control of the a-Si:H deposition temperature and the PH3 (2% in H2)/SiH4 gas flow ratio. The stress and intragrain misorientations in the SPC poly-Si films are found to affect their crystal quality. The poly-Si thin films with the best crystal quality are also found to have the least tensile stress and a low intragrain misorientation of about 1°. The effects of the PH3 (2% in H2)/SiH4 gas flow ratio and the a-Si:H deposition temperature on the material quality of the n-type SPC poly-Si thin films are systematically investigated using Raman microscopy and electron backscatter diffraction.
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