Abstract
Narrow-band green-emitting phosphor β-SiAlON:Eu has been widely used in advanced wide-gamut backlighting devices. However, the origins for unusual sharp lines in photoluminescence emission at room temperature and tunable narrow-band-emission tailored by reducing Al–O in β-SiAlON:Eu are still unclear. Here, the presence of sharp-line fine structure in the emission spectra of β-SiAlON:Eu is mainly due to purely electronic transitions (zero phonon lines), and their vibronic repetitions resulting from the multimicroenvironment around Eu2+ ions that has been revealed by relative emission intensity of sharp line depends on excitation wavelength and monotonously increasing decay time. The specific features of the Eu2+ occupying interstitial sites indicate that the effect of crystal field strength can be neglected. Therefore, the enhanced rigidity and higher ordering structure of β-SiAlON:Eu with decreasing the substitution of Si–N by Al–O become the main factors in decreasing electron–lattice coupling and reduci...
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