Abstract
We have developed a reactive ion etch (RIE) process in borophosphosilicate glass (BPSG) for 150 nm line-and-space features, where line-edge roughness (LER) complemented with RIE lag becomes a major issue. Effect of flow rates and carbon-to-fluorine atomic ratio of fluorohydrocarbon gases was utilized to achieve acceptable process window allowing lower radio frequency powers therefore obtaining acceptable LER and RIE lag in the high-resolution features etched into BPSG.
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