Controlling Energy Transfer in Silicon Quantum Dot Assemblies Made from All-Inorganic Colloidal Silicon Quantum Dots

Abstract

The optical response of an assembly of semiconductor quantum dots (QDs) is strongly modified from those of isolated ones by the inter-QD coupling. The strength of the coupling depends on the size, the inter-QD distance and the number of interacting QDs. In this work, we control these parameters of silicon (Si) QD assemblies by layer-by-layer growth of all-inorganic colloidal Si QDs. We perform detailed photoluminescence (PL) and PL decay dynamics studies for the assemblies made from monolayers of Si QDs 3.0 and 6.8 nm in diameters by precisely controlling the interlayer distance and the number of layers. From the analysis of the data with the Forster resonance energy transfer (FRET) model, we quantitatively discuss the relation between the FRET efficiency and the Forster radius in Si QD assemblies.