Abstract
Heterostructure transport properties is investigated theoretically based on two-dimensional planar HgTe/CdTe quantum wells structure by a dual-gate modulations. Two voltage gates is deposited on the top of the heterostructure to create the corresponding electrical modulation potential. The electron transport property is explored by calculating the transmission spectrum by tuning the incidence angle, Fermi energy and electrical modulation potential. It is demonstrated that the transmission probability can be effectively tuned by changing the incidence angle, gate voltage and Fermi energy. Our findings pave the way for possible future applications of topological insulator-based devices.
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