Abstract
AbstractSemiconducting 2D materials, such as SnS2, hold great promise in a variety of applications including electronics, optoelectronics, and catalysis. However, their use is hindered by the scarcity of deposition methods offering necessary levels of thickness control and large‐area uniformity. Herein, a low‐temperature atomic layer deposition (ALD) process is used to synthesize up to 5 × 5 cm2 continuous, few‐layer SnS2 films on a variety of substrates, including SiO2/Si, Si‐H, different ALD‐grown films (Al2O3, TiO2, and Ir), sapphire, and muscovite mica. As a part of comprehensive film characterization, the use of low energy ion scattering (LEIS) is showcased to determine film continuity, coverage of monolayer and multilayer areas, and film thickness. It is found that on sapphire substrate, continuous films are achieved at lower thicknesses compared to the other substrates, down to two monolayers or even less. On muscovite mica, van der Waals epitaxial growth is realized after the post‐deposition annealing, or even in the as‐deposited films when the growth is performed at 175 to 200 °C. This work highlights the importance of the substrate choice for 2D materials and presents a practical low‐temperature method for the deposition of high‐quality SnS2 films that may be further evaluated for a range of applications.
Highlights
SnS2 include lithium and sodium-ion batteries,[23,24] gas sensing,[25] and various kinds of catalysis.[26,27,28]Synthesis of 2D materials including SnS2 is, a major obstacle for the realization of practical applications.discovery of the unique and extraordinary properties of semime- An ideal synthesis method should offer high material quality, tallic graphene in 2004.[1]
We have prepared air-stable SnS2 thin films on different substrates by atomic layer deposition (ALD) using tin(IV) acetate and hydrogen sulfide at 150 °C followed by mild H2S/N2 annealing at 250–300 °C to crystallize the films.[36]
We illustrate how the substrate can affect the growth, morphology, continuity, and crystallinity of SnS2 films deposited by ALD using tin(IV) acetate [Sn(OAc)4] and hydrogen sulfide (H2S) precursors at 150 °C followed by post-deposition annealing at 250–300 °C in a H2S/N2 atmosphere.[36]
Summary
SnS2 include lithium and sodium-ion batteries,[23,24] gas sensing,[25] and various kinds of catalysis.[26,27,28]. The absence of covalent bonding between the film and the substrate leads to relaxed requirements on lattice matching compared to the conventional epitaxy and avoids build-up of strain in the films.[58,59,60] The vdW epitaxially grown nuclei ideally merge together to form a monocrystalline film, which overcomes the limitations of small grain size and thereby improves film properties.[61,62] For SnS2, vdW epitaxy was demonstrated in the 1990s with films grown in ultra-high vacuum conditions on mica,[63,64] graphite,[65] and various 2D chalcogenides.[63,65] Recently, we demonstrated vdW epitaxy of 2D materials including SnS2 at low temperatures and in low vacuum conditions using ALD.[66]. VdW epitaxial growth is observed and either smooth www.advmatinterfaces.de and continuous films or triangular crystallites are obtained depending on the deposition conditions
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