Controlled wetting properties of proton beam irradiated silicon nanowires

Abstract

• Pre-irradiation and SAE etching are developed for the fabrication of KSiNWs, selectively. • Point defects by proton irradiation are responsible for the observed kink like structures. • CA of KSiNWs demonstrated a superhydrophobic limit of ~ 133° at higher fluence. • Theoretical fitting concludes that the water droplet on KSiNWs slashes in a slower approach. Kinked silicon nanowires (KSiNWs) were grown by silver assisted electroless (SAE) etching of proton beam irradiated silicon. The length and the aspect ratio of the KSiNWs were found to decrease with an increase in the ion fluence. The point defects produced during proton irradiation seem to be responsible for the observed kink like structures. The wetting property of these KSiNWs has been controlled by pre-ion irradiation treatment. The surface roughness of KSiNWs was correlated with the observed water contact angle. An increase in implantation fluence resulted in a large contact angle, approaching the superhydrophobic limit (~133°).