Abstract
Dynamic localization has been thoroughly studied since 1986 by Dunlap in superlattice structures. However, its implications for terahertz (THz) radiation have not been fully explored. Here, we investigate the interplay between dynamic localization and THz radiation generation in semiconductor structures. Utilizing a two-color laser field, we reveal that intraband current is the primary source of THz radiation. Furthermore, we identify minima in THz radiation yield at specific laser field strengths, indicating the presence of dynamic localization. The relative phase of the two-color laser field and dephasing time can manipulate the extent and range of dynamic localization, thereby influencing the efficiency of THz radiation. Our findings provide valuable insights into simultaneous investigations on materials across different time scales.
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