Abstract
Abstract In the present study, we have successfully synthesized the novel heterostructure of NiS nanoparticle (NP)/CdS nanowire (NW) through solution approach. The first step, CdS nanowires were synthesized by a convenient solvothermal route. Then, NiS nanoparticles were grown on the surface of CdS nanowires in a chemical solution of NiCl2·6H2O and anhydrous ethanol at 200 °C. The new catalyst-assisted growth mechanism of the NiS NP/CdS NW heterostructure has been tentatively discussed on the basis of experimental results. A detailed study of the effect of experimental parameters, such as reaction time, reaction temperature, and reaction solvent are also studied. The as-prepared products are characterized by field-emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), and their optical properties are measured by Raman spectra and PL spectra. Furthermore, using CdS nanowires and NiS NP/CdS NW heterostructure as examples, our study suggests that this general method can be employed for construction of other semiconductor heterostructures with novel properties.
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