Controlled synthesis of monolayer graphene with a high quality by pyrolysis of silicon carbide

Abstract

Monolayer graphene with high quality was synthesized by pyrolysis of 6H-silicon carbide single crystal in a medium frequency induction heating furnace. The obtained graphene was systematically studied via Raman spectroscopy, atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM). The characterized results showed that monolayer graphene with high quality was obtained when the growth temperature, Ar flow, and growth pressure was 2000 °C, 150 sccm, and 15 Torr, respectively. Our results showed that growth temperature, Ar flow, and growth pressure had great influence on the quality of the obtained monolayer graphene. Compared with the conventional monolayer graphene preparation methods, our method is simple, controllable, and repeatable, which greatly expands the application prospect of graphene.