Abstract
As an emerging ultrathin semiconductor material, Bi2O2Se has shown outstanding performance in fields of electronics, optoelectronics and ultrafast optics. High performance Bi2O2Se nanosheets were desperately needed for further foundational research and practical applications. However, their synthesis has not yet been completely developed. In this paper, high quality Bi2O2Se nanosheets were efficiently obtained by sdjusting synthesis pressure. The uniform nucleation of Bi2O2Se nanosheets on substrates was achieved, put forward the nucleation mechanism of Bi2O2Se nanosheets. The near-infrared (NIR) optoelectronic properties of multilayer Bi2O2Se nanosheets were systematically investigated. Photodetectors were constructed based on Bi2O2Se nanosheets of different thicknesses and the near-infrared (NIR) photoelectric properties of Bi2O2Se-based photodetectors with the highest responsivity were systematically investigated. The multilayer Bi2O2Se nanosheets exhibit sensitive responsivity to the NIR, including high responsivity (∼825 A/W), high external quantum efficiency (∼1.25 × 105%) and high detectivity (6 × 1010Jones). These results suggest that devices based on multilayer Bi2O2Se nanosheets may have great potential for future applications in ultrafast, high-sensitivity NIR optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
