Abstract
Two-dimensional heterostructures of atomically thin monolayer generated considerable interest for developing novel optoelectronic devices. Here, we report direct growth of MoS2/WS2 heterostructures by controlled sulfurization of DC sputtered thin films and CVD growth optimization. We have established the processing window for direct growth of MoS2/WS2 stacked heterostructure on SiO2/Si substrate. Spatially resolved Raman and photoluminescence mappings are performed to confirm individual MoS2, WS2 and heterostructure growth. Experiments conducted at various temperatures along with areal distribution analysis of heterostructure revealed accurate processing window (700 °C–720 °C) for heterostructure growth of MoS2/WS2 while slightly lower or higher temperature favor MoS2 and WS2 monolayer growth respectively. The investigated growth by combining DC sputtering of metal films and controlled sulfurization in CVD provide the platform to fabricate 2D layered heterostructures for the next generation requirements.
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