Abstract
We discuss spontaneous-emission phenomena in semiconductor slabs with a two-dimensional photonic bandgap. Calculations predict that the spontaneous emission coupled to the slab modes, which is strongly confined within the slab plane, is inhibited. Simultaneously, the saved energy is redistributed to the spontaneous emission that is coupled to the vertical emission modes. Control of the spontaneous emission is experimentally demonstrated by measuring time-resolved photoluminescence spectra from GaInAsP quantum-well samples. The suppression of non-radiative processes is achieved by the introduction of InAs quantum dots, which can confine carriers in three dimensions. This method allows control of the spontaneous emission to a degree close to the theoretical limit calculated by the finite-difference time-domain method. Our results demonstrate the realization of an ideal two-dimensional photonic-bandgap environment, and open up possibilities for various applications of photonic crystals using spontaneous-emission phenomena.
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