Abstract
Photoluminescence images containing several distinct color emissions, from green to red, have been obtained using high-energy focused ion beam irradiation, in conjunction with metal-aided anodization of p-type silicon. The ion irradiation increases the local resistivity in a controlled manner resulting in smaller hole currents flow through the irradiated areas. This causes a controlled redshift of up to in the photoluminescence emission, which in terms of the quantum confinement model would correlate to larger nanocrystallites forming in the irradiated region.
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