Abstract

We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [11~0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25/spl deg/-90/spl deg/ towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.

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