Abstract
Composite 1keV ion beam irradiation was used to oxidise the mono-Si and Si3N4 wafers at room temperature. It was shown the formation of ∼50nm amorphous SiO2 layer at the top of the wafer. XTEM EELS data proved the high quality of radiation-induced silicon oxide. In bouth cases, at the beginning of irradiation we have demonstrated the preferable oxidation of inner layers at the irradiation-induced maximun vacancy production depth.
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