Abstract

The lack of effective control on the defects and layers of graphene restricts its advanced technological applications. The synthesis of high-quality graphene requires a low nucleation density. By the pre-oxidation of copper foil and subsequent annealing in reducing atmosphere with different time, the effect of surface morphology variation on the nucleation density of graphene domains were discussed, as well as on the domain size. The obtained domain is the combination of sub-millimeter-size single-crystal graphene layer and thick multilayer graphene branches. The formation mechanism of the special structure was explored, as the accumulation of carbon atoms at the surface impurities with the help of oxygen. These results provide directions for the synthesis of controllable high-quality graphene films.

Highlights

  • Due to the extraordinary properties of high-quality graphene, it possesses great potential in realizing nanoelectronic devices with high performance

  • Graphene domains were deposited on the substrates in atmospheric pressure by adding 10 sccm diluted CH4 (0.5% in Ar)

  • The variation of domain size with the annealing time was in contrast to that of the nucleation density (Figure 1h)

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Summary

Introduction

Due to the extraordinary properties of high-quality graphene, it possesses great potential in realizing nanoelectronic devices with high performance. The random nucleation during the deposition process results in a large number of grain boundaries in the polycrystalline graphene film, degrading the electrical, thermal, and mechanical properties (Cai et al, 2010; Grantab et al, 2010; Tsen et al, 2012). Great efforts have been made on the growth of single-crystal graphene to reduce the boundary defects. Wellaligned graphene crystals were precisely controlled in the same orientation for seamless stitching, resulting in a large-area single crystal without grain boundaries (Lee et al, 2014; Nguyen et al, 2015). The nucleation density of graphene domains were suppressed to provide adequate space for the growth of large single crystals, reducing the boundary density

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