Controlled n-type doping in graphene using a photobase generator and polyethylene oxide blends

Abstract

Achieving stable n-type doping in graphene is a critical challenge in materials science, which is essential for various device applications. We present a novel approach using a photobase generator (PBG), specifically 2-(9-oxoxanthen-2-yl)propionic acid-1,5,7-triazabicyclo[4.4.0]dec-5-ene, in combination with polyethylene oxide (PEO) under UV irradiation to achieve controlled and stable n-type doping. This method effectively reduces PBG crystallization and allows precise modulation of doping transitions by varying PBG concentrations and UV exposure times. Our innovative hybrid approach provides enhanced control over doping transitions, resulting in optimized graphene-based devices with sustainable functionalities. In particular, the method demonstrated long-term stability of more than 160 days, making it viable for practical applications in thermoelectric devices and other areas. This represents a significant advancement over previous methods in terms of cost, scalability, and stability.