Abstract
Fabrication of photoluminescent n-type porous silicon (nPS), using electrode-assisted lateral electric field accompanied with a perpendicular magnetic field, is reported. The results have been compared with the porous structures fabricated by means of conventional anodization and electrode-assisted lateral electric field without magnetic field. The lateral electric field (LEF) applied across the silicon substrate leads to the formation of structural gradient in terms of density, dimension, and depth of the etched pores. Apart from the pore shape tunability, the simultaneous application of LEF and magnetic field (MF) contributes to a reduction of the dimension of the pores and promotes relatively more defined pore tips as well as a decreased side-branching in the pore walls of the macroporous structure. Additionally, when using magnetic field-assisted etching, within a certain range of LEF, an enhancement of the photoluminescence (PL) response was obtained.
Highlights
It is well known that a wide gamut of different morphologies of porous silicon (PS) can be obtained under a variety of different fabrication parameters
We report on the resultant structural effect due to the simultaneous application of electric and magnetic field during the fabrication process and the morphologies obtained when one of those key parameters is varied
In order to investigate the influence of fabrication parameters on the structural characteristics of the n-type porous silicon (nPS) samples, three parameters were studied: (a) resistivity of the n-type silicon (n-Si) wafer, (b) lateral electric field (LEF), and (c) magnetic field (MF)
Summary
It is well known that a wide gamut of different morphologies of porous silicon (PS) can be obtained under a variety of different fabrication parameters. Morphology is highly dependent on the intrinsic properties of the silicon substrate along with key fabrication parameters such as current density, hydrofluoric acid (HF) concentration, doping type, dopant concentration, and, in some cases, the illumination conditions [1]. PS fabricated in the dark or under illumination exhibit different morphological properties [4]. Control of the morphology is necessary when distinct structural characteristics are required on the same chip, the effects of the fabrication parameters on the resultant morphology of the sample along with the addition of a magnetic field (MF) under the e-LEF setup [11] have not been explored yet. We report on the resultant structural effect due to the simultaneous application of electric and magnetic field during the fabrication process and the morphologies obtained when one of those key parameters is varied. The corresponding changes in the photoluminescence (PL) properties have been explored
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